Large thermoelectric figure of merit at high temperature in Czochralski-grown clathrate Ba8Ga16Ge30
Large thermoelectric figure of merit at high temperature in Czochralski-grown clathrate Ba8Ga16Ge30
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DOI：
10.1063/1.2163979
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发表时间：
2006-01
影响因子：
3.2
通讯作者：
A. Saramat;G. Svensson;A. Palmqvist;C. Stiewe;E. Mueller;D. Platzek;S. Williams;D. Rowe;J. D. Bryan;G. Stucky
中科院分区：
文献类型：
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作者：
A. Saramat;G. Svensson;A. Palmqvist;C. Stiewe;E. Mueller;D. Platzek;S. Williams;D. Rowe;J. D. Bryan;G. Stucky
用提拉法生长了46 mm长的Ba8Ga16Ge30包合物晶体，并将其切割成圆盘，对其热电性能进行了评估。在600-900K温度范围内，Seebeck系数、电导率和热导率都显示出从本征行为到本征行为转变的证据。在900K时，相应的优值系数(ZT)达到了创纪录的1.35，在1100K时，推算出的最大值为1.63。这使得Ba8Ga16Ge30笼状化合物成为中高温热电应用的极佳候选材料。
The Czochralski method was used to grow a 46-mm-long crystal of the Ba8Ga16Ge30 clathrate, which was cut into disks that were evaluated for thermoelectric performance. The Seebeck coefficient and electrical and thermal conductivities all showed evidence of a transition from extrinsic to intrinsic behavior in the range of 600–900K. The corresponding figure of merit (ZT) was found to be a record high of 1.35 at 900K and with an extrapolated maximum of 1.63 at 1100K. This makes the Ba8Ga16Ge30 clathrate an exceptionally strong candidate for medium and high-temperature thermoelectric applications.