Electrical Tuning of the SERS Enhancement by Precise Defect Density Control
Electrical Tuning of the SERS Enhancement by Precise Defect Density Control
复制标题
通过精确缺陷密度控制对 SERS 增强进行电调谐
DOI：
10.1021/acsami.9b10856
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发表时间：
2019-09-18
影响因子：
9.5
通讯作者：
Zhou, Jun
中科院分区：
文献类型：
--
作者：
Zhou, Canliang;Sun, Linfeng;Zhou, Jun
Surface-enhanced Raman scattering (SERS) has been widely established as a powerful analytical technique in molecular fingerprint recognition. Although conventional noble metal-based SERS substrates show admirable enhancement of the Raman signals, challenges on reproducibility, biocompatibility, and costs limit their implementations as the preferred analysis platforms. Recently, researches on SERS substrates have found that some innovatively prepared metal oxides/chalcogenides could produce noble metal comparable SERS enhancement, which profoundly expanded the material selection. Nevertheless, to tune the SERS enhancement of these materials, careful experimental designs and sophisticated processes were needed. Here, an electrically tunable SERS substrate based on tungsten oxides (WO3-x) is demonstrated. An electric field is used to introduce the defects in the oxide on an individual substrate, readily invoking the SERS detection capability, and further tuning the enhancement factor is achieved through electrical programming of the oxide leakage level. Additionally, by virtue of in situ tuning the defect density and enhancement factor, the substrate can adapt to different molecular concentrations, potentially improving the detection range. These results not only help build a better understanding of the chemical mechanism but also open an avenue for engaging non-noble metal materials as multifunctional SERS substrates.
