Control of fine-structure splitting and biexciton binding in InxGa1-xAs quantum dots by annealing -: art. no. 161301
Control of fine-structure splitting and biexciton binding in InxGa1-xAs quantum dots by annealing -: art. no. 161301
复制标题
DOI：
10.1103/physrevb.69.161301
复制
发表时间：
2004-04-01
影响因子：
3.7
通讯作者：
Wieck, AD
中科院分区：
文献类型：
--
作者：
Langbein, W;Borri, P;Wieck, AD
在一系列退火的 InAs 量子点中测量了精细结构分裂 (h) 在 bar delta(1) 上的分布和双激子结合能 (h) 在 bar delta(B) 上的分布。我们发现随着退火温度的增加，(h) 相对于 bar delta(1) 从 96 mueV 减少到 6 mueV，这表明面内限制势的对称化。双激子结合能仅表现出对限制能的弱依赖性，我们将其归因于限制的减少和电子与空穴的分离的减少之间的补偿。
The distribution of the fine-structure splitting (h) over bar delta(1) and of the biexciton binding energy (h) over bar delta(B) are measured in a series of annealed InAs quantum dots. We find a decrease of (h) over bar delta(1) from 96 mueV to 6 mueV with increasing annealing temperature, indicating a symmetrizing of the in-plane confinement potential. The biexciton binding energy shows only a weak dependence on the confinement energy, which we attribute to a compensation between decreasing confinement and decreasing separation of electron and hole.