Thick and Smooth Hexagonal GaN Growth on GaAs (111) Substrates at 1000°C with Halide Vapor Phase Epitaxy
Thick and Smooth Hexagonal GaN Growth on GaAs (111) Substrates at 1000°C with Halide Vapor Phase Epitaxy
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1000°C 卤化物气相外延在 GaAs (111) 衬底上生长厚且光滑的六方 GaN
DOI：
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
T. Suemasu
中科院分区：
文献类型：
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作者：
F. Hasegawa;M. Minami;K. Sunaba;T. Suemasu
发现通过引入在中间温度（例如850°C）下用卤化物气相外延（HVPE）生长的GaN层，可以在高达1000° C的温度下在GaAs（111）衬底上生长具有光滑表面的六方GaN。在850°C下生长的GaN层的表面是粗糙的，但是当在1000°C下在其上生长GaN时，它变成光滑的表面，尽管有时在表面上有几个六边形凹坑。在大约1000 ° C或高于1000°C的温度下，六方GaN生长似乎存在某种表面平坦化机制。即使在850°C下生长，生长层的θ-2θ X射线衍射（XRD）也仅显示出六方（0002）峰，但在其上生长六方GaN在1000°C下提高了ω扫描的半高宽（FWHM）。
It was found that hexagonal GaN with a smooth surface can be grown on GaAs (111) substrates at temperatures as high as 1000°C by introducing a GaN layer grown at an intermediate temperature such as 850°C with halide vapor phase epitaxy (HVPE). The surface of the GaN layer grown at 850°C was rough but it became smooth surface when GaN was grown on it at 1000°C, though sometimes there were several hexagonal pits on the surface. There seems to be some surface flattening mechanism for hexagonal GaN growth at temperatures around or higher than 1000°C. The θ-2θ X-ray diffraction (XRD) of the grown layer showed only a hexagonal (0002) peak even for the layer grown at 850°C, but the full width at half maximum (FWHM) of the ω scan was improved by the growth of hexagonal GaN at 1000°C on it.