Contact Resistivity of Evaporated Al Contacts for Silicon Solar Cells
Contact Resistivity of Evaporated Al Contacts for Silicon Solar Cells
复制标题
硅太阳能电池蒸发铝触点的接触电阻率
DOI：
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发表时间：
2015
影响因子：
3
通讯作者：
E. Wang
中科院分区：
文献类型：
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作者：
K. Fong;T. Kho;A. Fell;E. Franklin;N. Zin;A. Blakers;K. McIntosh;T. Ratcliff;M. Stocks;J. Bullock;E. Wang
蒸发铝掺杂硅上的接触电阻率检查的一系列的工艺条件下常见的实验室硅太阳能电池的制造。硅表面制备之前的蒸发，烧结温度，使用的快门，和蒸发功率的影响进行了研究。所提出的蒸发条件产生了最低的铝和磷掺杂的硅之间的接触电阻率在一个大范围的掺杂浓度。实验还表明，在不烧结的情况下，接触电阻率可以达到10-6 Ω·cm ~ 2以下。利用三维模拟来比较蒸发Al接触与钝化接触的结果。
The contact resistivity of evaporated Al on doped silicon is examined for a range of process conditions common to the fabrication of laboratory silicon solar cells. The effects of silicon surface preparation prior to evaporation, sintering temperature, the use of a shutter, and evaporation power are investigated. The presented evaporation conditions yielded the lowest published contact resistivity between Al- and phosphorus-doped Si over a large range of doping concentration. It is also demonstrated that a contact resistivity below 10-6 Ω·cm2 can be achieved without sintering. Three-dimensional simulations are utilized to compare the obtained results for evaporated Al contacts with those for passivated contacts.