A possible mechanism of anomalous shift and asymmetric hysteresis behavior of ferroelectric thin films
A possible mechanism of anomalous shift and asymmetric hysteresis behavior of ferroelectric thin films
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DOI：
10.1063/1.1853520
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发表时间：
2005-01
影响因子：
4
通讯作者：
C. Wong;F. G. Shin
中科院分区：
文献类型：
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作者：
C. Wong;F. G. Shin
从理论上研究了铁电薄膜的磁滞行为。利用双层模型讨论了反常铁电响应。考虑了薄膜的导电性。为了模拟界面极化和介电常数不均匀的影响，假设薄膜具有非对称导电性的二次介电/铁电相(死层或无源层)。这种构型被发现产生了测量的磁滞回线的大的位移(沿场轴)和变形。这是材料导电性不对称的一种表现。基于该模型的理论计算表明，用这种方法可以解释铁电薄膜中观察到的磁滞回线移位和扭曲现象。
We studied theoretically the hysteresis behavior of ferroelectric thin films. The anomalous ferroelectric response is discussed by use of a bilayer model. Electrical conductivities of the films have been taken into account. To model the effects of the inhomogeneity of polarization and permittivity across the interface, the film is assumed to possess a secondary dielectric∕ferroelectric phase (a dead or passive layer) with asymmetric conductivity. This configuration is found to produce large shifting (along the field axis) and deformation of the measured hysteresis loop. This is a manifestation of the asymmetric conductivity of the material. Theoretical calculation based on this model shows that the observed phenomena of shifted and skewed hysteresis loop in ferroelectric thin films can be explained in this way.