Electronic properties of transition-metal dichalcogenides
Electronic properties of transition-metal dichalcogenides
复制标题
DOI：
10.1557/mrs.2015.143
复制
发表时间：
2015-07-01
期刊：
影响因子：
5
通讯作者：
Kis, Andras
中科院分区：
文献类型：
--
作者：
Kuc, Agnieszka;Heine, Thomas;Kis, Andras
石墨烯并不是二维（2D）材料的唯一突出例子。由于其高机械强度和光学透明度的有趣组合，直接带隙和原子尺度厚度的过渡金属二硫属化物（TMDC）是现在争夺材料研究界关注的其他材料的一个例子。本文介绍了半导体TMDC材料的电子和力学性质的量子理论计算的现状。特别是，有趣的外部参数（电场，应变）和能带结构之间的相互作用，以及由不同的二维TMDC垂直堆叠形成的异质结构的基本性质进行了审查。还介绍了从简单的场效应晶体管到要求更高的逻辑电路、高频晶体管和存储器件的二硫化钼、WS2和WSe2及其异质结构的电气测量。
Graphene is not the only prominent example of two-dimensional (2D) materials. Due to their interesting combination of high mechanical strength and optical transparency, direct bandgap and atomic scale thickness transition-metal dichalcogenides (TMDCs) are an example of other materials that are now vying for the attention of the materials research community. In this article, the current state of quantum-theoretical calculations of the electronic and mechanical properties of semiconducting TMDC materials are presented. In particular, the intriguing interplay between external parameters (electric field, strain) and band structure, as well as the basic properties of heterostructures formed by vertical stacking of different 2D TMDCs are reviewed. Electrical measurements of MoS2, WS2, and WSe2 and their heterostructures, starting from simple field-effect transistors to more demanding logic circuits, high-frequency transistors, and memory devices, are also presented.