Modification of metal/GaN contacts with GaAs interlayers
Modification of metal/GaN contacts with GaAs interlayers
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具有 GaAs 中间层的金属/GaN 接触的改性
DOI：
10.1063/1.370158
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
Y. Watanabe
中科院分区：
文献类型：
--
作者：
K. Horiba;K. Ono;H. Fujioka;M. Oshima;H. Miki;A. Fukizawa;M. Okuyama;Y. Watanabe
我们用同步辐射光电子能谱研究了金属/氮化镓界面上GaAs中间层的可行性。我们发现使用食人鱼/盐酸溶液作为氮化镓的表面清洁技术是有效的。我们已经证实（111）GaAs在（0001）GaN衬底上外延生长。利用分子束外延技术成功制备了Pd/GaAs/GaN夹层结构。我们已经证实，GaAs中间层改变了金属/GaN界面的能带图。
We have investigated feasibility of GaAs interlayers for the metal/GaN interface with synchrotron-radiation photoelectron spectroscopy. We have found that the use of piranha/HCl solutions is effective as a surface cleaning technique for GaN. We have confirmed that (111) GaAs grows epitaxially on a (0001) GaN substrate. Pd/GaAs/GaN sandwich structures have been successfully fabricated with molecular beam epitaxy. We have confirmed the GaAs interlayer modifies the band diagram at the metal/GaN interface.