Ultrathin organic single crystals: fabrication, field-effect transistors and thickness dependence of charge carrier mobility
Ultrathin organic single crystals: fabrication, field-effect transistors and thickness dependence of charge carrier mobility
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DOI：
10.1039/c0jm04383d
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发表时间：
2011-01-01
影响因子：
--
通讯作者：
Kloc, Christian
中科院分区：
文献类型：
--
作者：
Jiang, Hui;Tan, Ke Jie;Kloc, Christian
Organic single crystals with thickness ranging from a few monolayers to micrometres were fabricated by an "Organic Crystal Cleavage" method. The mobility slightly increased with decreased thickness and rose sharply when the crystal thickness was below some critical thickness. The gate induced charges in the field-effect transistor (FET) channel and in the vicinity of the metal-semiconductor interface reducing the contact barrier. The values of mobility measured on very thin crystals without the contact barrier precisely reflect the transport properties of organic semiconductors.
