Cross-sectional scanning tunneling microscopy of InGaAs quantum dots

Cross-sectional scanning tunneling microscopy of InGaAs quantum dots
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InGaAs量子点的横截面扫描隧道显微镜

DOI：
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发表时间：
1998
期刊：
Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178)
影响因子：
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通讯作者：
A. Gossard
A. Gossard
中科院分区：
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文献类型：
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作者：
C. Harnett;S. Evoy;H. Craighead;K. Pond;J. H. Kim;A. Gossard

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Summary form only given. Topographic cross section scanning tunnelling microscope (X-STM) images show dot sizes of approximately 20 nm, consistent with atomic force microscopy measurements on similar samples. I-V measurements on the QDs feature a lower tunneling current turn-on for the dots than the surrounding areas. Tunneling-induced luminescence images from the surrounding layers provide additional information about carrier behavior within the system.