Permeability Measurements of Magnetic Thin Films using Shielded Short-Circuited Microstrip Lines
Permeability Measurements of Magnetic Thin Films using Shielded Short-Circuited Microstrip Lines
复制标题
使用屏蔽短路微带线测量磁性薄膜的磁导率
DOI：
10.3379/msjmag.1510r002
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发表时间：
2015
影响因子：
--
通讯作者：
H. Suzuki
中科院分区：
文献类型：
--
作者：
S. Takeda;T. Hotchi;S. Motomura;H. Suzuki
提出了一种利用屏蔽短路微带线作为测试夹具测量0.1 ~ 10 GHz宽频带5 mm 2磁性薄膜磁导率的方法。用矢量网络分析仪（VNA）测量了测试夹具的S11参数。基于集总元件近似，通过比较S11 s和S11 os，推导出磁导率，其中S11 s对应于没有和具有与微带线引起的微波磁场平行的强磁场。在这种情况下，由于微带线和衬底之间的间隙很小，薄膜制备的衬底的影响不能忽略。本文介绍了一种通过比较强静磁场下空白夹具和样品夹具的S11 o来推导衬底引起的有效介电常数ε的方法。我们还提出了一种方法来确定是否集总元件近似是有效的或没有。
A method to measure wideband permeability was developed for 5-mm-square magnetic thin film from 0.1 to 10 GHz by using a shielded short-circuited microstrip line as the test fixture. The S11 parameters of the test fixture were measured with a vector network analyzer (VNA). The permeability was derived, based on the lumped element approximation, by comparing S11s with S11os which corresponded to without and with a strong magnetic field parallel to the microwave magnetic field caused by the microstrip line. In this case, the influence of substrate on which the thin film prepared could not be neglected due to the small gap between the microstrip line and the substrate. We introduced a method to derive an effective permittivity e caused by the substrate by comparing S11o of blank fixture with S11os of fixture with sample under a strong static magnetic field. We also propose a method of determining whether the lumped element approximation is valid or not.