RTN-based defect tracking technique: Experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2RRAM switching operation and failure mechanism
RTN-based defect tracking technique: Experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2RRAM switching operation and failure mechanism
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DOI：
10.1109/vlsit.2016.7573402
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发表时间：
2016-06
期刊：
影响因子：
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通讯作者：
Chai Zheng;Jigang Ma;W. Zhang;B. Govoreanu;Eddy Simoen;J. Zhang;Z. Ji;Rui Gao;Guido Groeseneken;Malgorzata Jurczak
中科院分区：
文献类型：
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作者：
Chai Zheng;Jigang Ma;W. Zhang;B. Govoreanu;Eddy Simoen;J. Zhang;Z. Ji;Rui Gao;Guido Groeseneken;Malgorzata Jurczak
第一次，RTN为基础的缺陷跟踪技术已经开发出来，可以监测缺陷的运动和灯丝的变化在RRAM设备。在不同条件下的开关操作过程中，确定了临界灯丝区域，揭示了新的持久失效机理。该技术为RRAM技术的发展提供了有用的工具。
For the first time, an RTN based defect tracking technique has been developed that can monitor the defect movement and filament alteration in RRAM devices. Critical filament region has been identified during switching operation at various conditions and new endurance failure mechanism is revealed. This technique provides a useful tool for RRAM technology development.