The Influence of Medium Dose Ion Implantation on the Reliability of Thin Gate Oxide
The Influence of Medium Dose Ion Implantation on the Reliability of Thin Gate Oxide
复制标题
中剂量离子注入对薄栅氧化层可靠性的影响
DOI：
10.1149/1.2048623
复制
发表时间：
1995
影响因子：
3.9
通讯作者：
Y. Todokoro
中科院分区：
文献类型：
--
作者：
K. Yoneda;K. Hagiwara;Y. Todokoro
The influence of medium dose ion implantation on the dielectric breakdown reliability of thin gate oxide is discussed. Medium dose ion implantation and subsequent high temperature oxidation degrade the dielectric breakdown characteristics of metal oxide semiconductor capacitors. The deterioration of breakdown characteristics strongly depends on ion species, dose, oxidation temperature, and oxidation ambient. The dielectric breakdown fields and charge to breakdown (Q{sub BD}) reduce, drastically at doses of 5 {times} 10{sup 13}, 1 {times} 10{sup 14}, and 5 {times} 10{sup 14} cm{sup {minus}2} for the arsenic (As{sup +}), phosphorites (P{sup +}), and boron (B{sup +}) implantation, respectively. The breakdowns occur due to weak spots formed along the localized oxidation of silicon (LOCOS) edge by the combination of medium dose ion implantation,high temperature oxidation, and residual stress near the LOCOS edge.
The influence of medium dose ion implantation on the dielectric breakdown reliability of thin gate oxide is discussed. Medium dose ion implantation and subsequent high temperature oxidation degrade the dielectric breakdown characteristics of metal oxide semiconductor capacitors. The deterioration of breakdown characteristics strongly depends on ion species, dose, oxidation temperature, and oxidation ambient. The dielectric breakdown fields and charge to breakdown (Q{sub BD}) reduce, drastically at doses of 5 {times} 10{sup 13}, 1 {times} 10{sup 14}, and 5 {times} 10{sup 14} cm{sup {minus}2} for the arsenic (As{sup +}), phosphorites (P{sup +}), and boron (B{sup +}) implantation, respectively. The breakdowns occur due to weak spots formed along the localized oxidation of silicon (LOCOS) edge by the combination of medium dose ion implantation,high temperature oxidation, and residual stress near the LOCOS edge.