Extremely low sputtering degradation of polytetrafluoroethylene by C60 ion beam applied in XPS analysis
Extremely low sputtering degradation of polytetrafluoroethylene by C60 ion beam applied in XPS analysis
复制标题
DOI：
10.1002/sia.1680
复制
发表时间：
2004-03-01
影响因子：
1.7
通讯作者：
Ohashi, Y
中科院分区：
文献类型：
--
作者：
Sanada, N;Yamamoto, A;Ohashi, Y
我们应用了富勒烯（C - 60）离子束溅射技术进行XPS分析。使用能量为每个碳原子83电子伏特的5千伏C - 60离子束对5毫米×5毫米的区域进行溅射时，获得了二氧化硅的实际溅射速率为2.4纳米/分钟。在这些条件下，观察到聚四氟乙烯的溅射损伤极低。将结果与500伏和5千伏的氩离子束能量进行了比较。这些是首次将C60离子束用于XPS分析且溅射损伤有限的结果。版权所有（C）2004约翰威立父子有限公司
We have applied sputtering using a buckminsterfullerene (C-60) ion beam for XPS analysis. A practical sputter rate of 2.4 nm min(-1) for SiO2 was obtained for sputtering an area of 5 mm x 5 mm using a 5 kV C-60 ion beam with an energy of 83 eV per carbon atom. Extremely low sputtering degradation of polytetrafluoroethylene was observed in these conditions. The results were compared with argon ion beam energies of 500 V and 5 kV. These are the first results utilizing a C60 ion beam for XPS analysis with limited sputtering damage. Copyright (C) 2004 John Wiley Sons, Ltd.