Titanium diffusion in silicon
Titanium diffusion in silicon
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钛在硅中的扩散
DOI：
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发表时间：
1988
期刊：
影响因子：
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通讯作者：
D. Mathiot
中科院分区：
文献类型：
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作者：
S. Hocine;D. Mathiot
在950-1200 °C的温度范围内测定了钛在硅中的扩散分布，实验条件避免了任何可能干扰TiSi 2/Si界面处边界条件的氧或氮污染。因此，得到的扩散系数值在5×10 −10-10−8 cm 2 s−1范围内，比以前报道的高出两个数量级。
Titanium diffusion profiles in silicon were determined in the 950–1200 °C temperature range, with experimental conditions avoiding any oxygen or nitrogen contamination, which could perturb the boundary condition at the TiSi2/Si interface. Thus diffusivity values in the range 5×10−10–10−8 cm2 s−1 are obtained, and are about two orders of magnitude higher than previously reported.