Initial Growth Process for FePt Ultra-thin Films on MgO Underlayers.
Initial Growth Process for FePt Ultra-thin Films on MgO Underlayers.
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MgO 底层上 FePt 超薄膜的初始生长过程。
DOI：
10.3379/jmsjmag.25.847
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
Y. Shimada
中科院分区：
文献类型：
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作者：
H. Sakaue;T. Miyazaki;O. Kitakami;Y. Shimada
在这项研究中，有序的L10-FePt纳米颗粒在MgO底层形成。非常薄的FePt薄膜（厚度：2 ~ 10 nm）在TS =520℃的衬底温度下形成直径约10 nm的岛。电阻率测量表明，这些岛屿隔离得很好。该分离在扫描电镜观察中得到证实。在室温下生长的MgO底层诱导了随后沉积的FePt的（001）取向。这些岛状结构的FePt薄膜即使标称厚度为2nm，矫顽力也高达5koe。
In this study well-ordered L10-FePt nanoparticles were formed on MgO underlayers. Very thin FePt films (thickness: 2 ∼ 10 nm) formed islands with diameters of about 10 nm at a substrate temperature of TS =520 °C. Resistivity measurements showed that the islands are well isolated. The isolation was confirmed in a SEM observation. MgO underlayers grown at ambient temperature induce (001) orientation of subsequently deposited FePt. These FePt films in island structure have coercivities as high as 5 kOe even for a nominal thickness of 2 nm.