A Novel FinFET With High-Speed and Prolonged Retention for Dynamic Memory
A Novel FinFET With High-Speed and Prolonged Retention for Dynamic Memory
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一种新型 FinFET，具有高速和长时间保持动态存储器的能力
DOI：
10.1109/led.2014.2365235
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发表时间：
2014
影响因子：
4.9
通讯作者：
Yang‐Kyu Choi
中科院分区：
文献类型：
--
作者：
Dong;Jee;Hyunjae Jang;H. Hong;C. Kim;J. Oh;Min;J. Kim;Yang‐Kyu Choi
一种具有电荷陷阱栅介质的三栅FinFET被证明用于高速和长保持存储器应用。对于无电容器的动态存储单元，氮化物层被用作电荷存储节点，并且其直接形成在硅沟道上。此外，新颖的栅极堆叠允许在低电压下进行高速写入过程，具有高达1012个周期的显著耐久性操作。通过电荷捕获操作，存储的数据在125°C下保持>104 s。
A trigate FinFET with a charge trap gate dielectric is demonstrated for high-speed and long retention memory applications. For a capacitor-less dynamic memory cell, a nitride layer is utilized as a charge storage node and it is directly formed on a silicon channel. In addition, novel gate-stacks allow high-speed and write processes under low voltage WITH remarkably endurable operation of up to 1012 cycles. By virtue of the charge trap operation, stored data is maintained for >104 s at 125°C.