Photodesorption from copper, beryllium, and thin films
Photodesorption from copper, beryllium, and thin films
复制标题
铜、铍和薄膜的光解吸
DOI：
10.1116/1.578028
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发表时间：
1992
期刊：
影响因子：
--
通讯作者：
G. Korn
中科院分区：
文献类型：
--
作者：
C. Foerster;H. Halama;G. Korn
电子-正电子对撞机和光源中不断增加的循环电流要求其真空室表面和光子吸收器的光致密度（PSD）越来越低。这在紧凑的电子储存环和B介子工厂中特别重要，因为在这些地方，几千瓦cm-1的光子功率沉积在表面上。考虑到上述因素，我们已经测量了PSD从1米长的酒吧（a）固体铜和固体铍，和（B），TiN，Au，和C薄膜沉积在固体铜棒。每个样品在国家同步加速器光源的真空紫外环处暴露于约1023光子/m，临界能量为500 eV。在两种条件下记录PSD：在200 °C烘烤之后和在Ar辉光放电清洁之后。此外，我们还测量了反射光子，光电子，解吸作为正常的功能，75，100，和125毫拉德入射光子。
Ever increasing circulating currents in electron‐positron colliders and light sources demand lower and lower photodesportion (PSD) from the surfaces of their vacuum chambers and their photon absorbers. This is particularly important in compact electron storage rings and B meson factories where photon power of several kW cm−1 is deposited on the surfaces. Given the above factors we have measured PSD from 1 m long bars of (a) solid copper and solid beryllium, and (b), TiN, Au, and C thin films deposited on solid copper bars. Each sample was exposed to about 1023 photons/m with a critical energy of 500 eV at the vacuum ultraviolet ring of the National Synchrotron Light Source. PSD was recorded for two conditions: after a 200 °C bakeout and after an Ar glow discharge cleaning. In addition, we also measured reflected photons, photoelectrons, and desorption as functions of normal, 75, 100, and 125 mrad incident photons.