Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition
Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition
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DOI：
10.1063/1.4801498
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发表时间：
2013-04-08
影响因子：
4
通讯作者：
Ringel, S. A.
中科院分区：
文献类型：
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作者：
Grassman, T. J.;Carlin, J. A.;Ringel, S. A.
GaP/Si异质结生长的金属有机化学气相沉积，其中形成的所有异价成核相关的缺陷（反相域，堆垛层错，和微孪晶）被完全和同时抑制，通过透射电子显微镜（TEM）观察。这是通过有意的Si（100）衬底取向不良、GaP生长之前的Si同质外延和通过Ga引发的原子层外延的GaP成核的组合来实现的。用原子力显微镜和透射电镜观察到Si同质外延过程中由于双原子台阶聚束引起的（311）Si表面非故意刻面，并发现这种刻面也产生了无缺陷的GaP/Si界面。(C)2013 AIP Publishing LLC.
GaP/Si heterostructures were grown by metal-organic chemical vapor deposition in which the formation of all heterovalent nucleation-related defects (antiphase domains, stacking faults, and microtwins) were fully and simultaneously suppressed, as observed via transmission electron microscopy (TEM). This was achieved through a combination of intentional Si(100) substrate misorientation, Si homoepitaxy prior to GaP growth, and GaP nucleation by Ga-initiated atomic layer epitaxy. Unintentional (311) Si surface faceting due to biatomic step-bunching during Si homoepitaxy was observed by atomic force microscopy and TEM and was found to also yield defect-free GaP/Si interfaces. (C) 2013 AIP Publishing LLC.