Impact of Auger Recombination on Charge Collection of a 6H-SiC Diode by Heavy Ions

Impact of Auger Recombination on Charge Collection of a 6H-SiC Diode by Heavy Ions
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DOI：
10.1109/tns.2007.908459
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发表时间：
2007-12
期刊：
IEEE Transactions on Nuclear Science
影响因子：
1.8
通讯作者：
S. Onoda;T. Ohshima;T. Hirao;K. Mishima;S. Hishiki;N. Iwamoto;K. Kawano
S. Onoda;T. Ohshima;T. Hirao;K. Mishima;S. Hishiki;N. Iwamoto;K. Kawano
中科院分区：
工程技术3区
文献类型：
--
作者：
S. Onoda;T. Ohshima;T. Hirao;K. Mishima;S. Hishiki;N. Iwamoto;K. Kawano

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用瞬时离子束感应电流(TIBIC)技术研究了6H-SiCp+n二极管在重离子作用下产生的电荷收集效率。利用计算机辅助设计(TCAD)技术进行的数值分析表明，俄歇复合过程降低了CCE。将实验测得的CCES与计算值进行了比较，发现双极俄歇系数约为10-29cm6/S的3倍。
Charge collection efficiency (CCE) generated in a 6H-SiC p+n diode by impact of heavy ions was evaluated by the transient ion beam induced current (TIBIC) technique. Numerical analysis by using technology computer aided design (TCAD) concludes that the Auger recombination process reduces CCE. Comparing experimentally measured CCEs with calculated ones revealed that the ambipolar Auger coefficient of about 3 times 10-29 cm6/s.