Low k-dielectric benzocyclobutane encapsulated AlGaN/GaN HEMTs with Improved off-state breakdown voltage
Low k-dielectric benzocyclobutane encapsulated AlGaN/GaN HEMTs with Improved off-state breakdown voltage
复制标题
低介电常数苯并环丁烷封装的 AlGaN/GaN HEMT，具有改进的断态击穿电压
DOI：
--
复制
发表时间：
2015
期刊：
影响因子：
--
通讯作者：
K. Ang
中科院分区：
文献类型：
--
作者：
Mulagumoottil Jesudas Anand;G. Ng;S. Arulkumaran;K. Ranjan;S. Vicknesh;K. Ang
研究了低k介质苯并环丁烷（BCB）封装对Si基AlGaN/GaN HEMT电学性能和结构稳定性的影响。BCB封装后，器件的漏电流密度、非本征极化和小信号微波性能没有下降。BCB层的固化温度（280 °C）对器件的电性能没有影响。与没有BCB封装的器件相比，BCB封装器件的栅极和漏极漏电流降低了102个数量级。一个数量级较低的表面漏电流也观察到两个相邻台面之间的BCB封装。由于漏电流的减少，观察到关断状态击穿电压增加了102倍。此外，9微米厚的BCB封装层还有助于形成结构稳定的空气桥。这项工作证明了低k介质BCB作为GaN HEMT和IC完全封装的可行解决方案。
The impact of low-k dielectric benzocyclobutane (BCB) encapsulation on the electrical performance and structural stability of AlGaN/GaN HEMTs on Si were investigated. After BCB encapsulation, devices exhibited no degradation in their drain current density, extrinsic transconductance and small signal microwave performances. The curing temperature (280 °C) of BCB layer had no influence on the device electrical performances. Compared to devices without BCB encapsulation, the BCB encapsulated devices achieved ∼2 orders of magnitude lower gate- and drain-leakage current. An order of magnitude lower surface leakage current was also observed by BCB encapsulation between the two adjacent mesas. Due to the reduction of leakage currents, ∼2-times increase of OFF-state breakdown voltage was observed. In addition, the 9-µm-thick BCB encapsulation layer also helps to have structurally stable air bridges. This work demonstrates the low-k dielectric BCB as a viable solution for the complete encapsulation of GaN HEMTs and ICs.