Over 100 Million Frames per Second 368 Frames Global Shutter Burst CMOS Image Sensor with Pixel-wise Trench Capacitor Memory Array
Over 100 Million Frames per Second 368 Frames Global Shutter Burst CMOS Image Sensor with Pixel-wise Trench Capacitor Memory Array
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DOI：
10.3390/s20041086
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发表时间：
2020-02-01
期刊：
影响因子：
3.9
通讯作者：
Sugawa, Shigetoshi
中科院分区：
文献类型：
--
作者：
Suzuki, Manabu;Sugama, Yuki;Sugawa, Shigetoshi
本文提出了一种超高速全局快门互补金属氧化物半导体 (CMOS) 图像传感器原型，该传感器具有像素级沟槽电容器存储器阵列，通过突发相关双采样 (CDS) 操作实现每秒超过 1 亿帧 (fps) 和高达 368 个记录长度。通过逐像素存储阵列架构减少像素输出负载并引入突发 CDS 操作（最大限度地减少像素驱动脉冲转换），可以获得超过 100 Mfps 的高帧速率。通过高密度模拟存储器与硅沟槽电容器的集成实现了长记录长度。在室温下，无需任何冷却系统，可实现最大 125 Mfps 帧速率和长达 368 条记录长度的视频捕获。测量突发CDS操作的光电转换特性并与传统CDS操作的光电转换特性进行比较。
In this paper, a prototype ultra-high speed global shutter complementary metal-oxide-semiconductor (CMOS) image sensor with pixel-wise trench capacitor memory array achieving over 100 million frames per second (fps) with up to 368 record length by burst correlated double sampling (CDS) operation is presented. Over 100 Mfps high frame rate is obtained by reduction of pixel output load by the pixel-wise memory array architecture and introduction of the burst CDS operation which minimizes the pixel driving pulse transitions. Long record length is realized by high density analog memory integration with Si trench capacitors. A maximum 125 Mfps frame rate with up to 368 record length video capturing was confirmed under room temperature without any cooling system. The photoelectric conversion characteristics of the burst CDS operation were measured and compared with those of the conventional CDS operation.