In Situ Scanning Tunneling Microscope Study of the Passivation of Cu(111)
In Situ Scanning Tunneling Microscope Study of the Passivation of Cu(111)
复制标题
Cu(111)钝化的原位扫描隧道显微镜研究
DOI:
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发表时间:
1999
期刊:
影响因子:
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通讯作者:
P. Marcus
中科院分区:
文献类型:
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作者:
V. Maurice;H. Strehblow;P. Marcus
In situ scanning tunneling microscopy has been used to study the nucleation and growth mechanisms and the structure of passive films formed on Cu(111) surfaces in 0.1 M borate buffer solution (pH 9.3). A surface topography characterized by terraces with monoatomic steps is obtained after potentiodynamic reduction down to {minus}1.12 V/standard hydrogen electrode (SHE), of the electropolished surface exposed to air. The formation of a single Cu{sub 2}O passive layer at 0.03 V/SHE proceeds first by a roughening of the steps assigned to a locally blocked step flow process due to a competition between dissolution and preferential nucleation of the oxide at the steps. The observed oxide nuclei are 2--3 nm wide and about one atomic plane high. This process leads to the complete coverage of the terraces by a grain-like structure of the oxide film. The initial terrace topography is completely altered. Thickening of this oxide layer leads to unstable scanning tunneling microscope imaging, despite the presence of a subband in the bandgap of the oxide. Duplex passive films Cu{sub 2}O{vert_bar}CuO-Cu(OH){sub 2}, produced at 0.98 V/SHE, are characterized by a grain-like structure with no detectable evidence of crystallinity. The lateral size of the grains ranges from 1 to 5 more » nm. The measured height difference is {le}1.5 nm. Stable imaging occurs via electron tunneling in the conduction band of the passive film. A metal surface topography can be recovered by potentiodynamic reduction of the oxide film down to {minus}0.92 V/SHE. The smallest terraces are eliminated by step coalescence in these oxidation/reduction treatments, which leads to steeper surface profiles. « less