GaN-Based Light-Emitting Diodes with Graphene Buffers for Their Application to Large-Area Flexible Devices
GaN-Based Light-Emitting Diodes with Graphene Buffers for Their Application to Large-Area Flexible Devices
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具有石墨烯缓冲器的 GaN 基发光二极管在大面积柔性器件中的应用
DOI：
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发表时间：
2017
影响因子：
0.5
通讯作者：
H. Fujioka
中科院分区：
文献类型：
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作者：
J. Ohta;J. Shon;K. Ueno;A. Kobayashi;H. Fujioka
通过脉冲溅射沉积（PSD），使用石墨烯缓冲层甚至可以在非晶衬底上生长结晶GaN膜。石墨烯缓冲层使我们能够在低衬底温度下生长高度c轴取向的GaN薄膜。在GaN/graphene结构上可以制作出全彩色GaN基LED，并成功地运行。这表明，目前的技术是有前途的未来大面积发光显示器上的非晶基板。关键词：GaN，石墨烯，玻璃，脉冲溅射沉积
Crystalline GaN films can be grown even on amorphous substrates with the use of graphene buffer layers by pulsed sputtering deposition (PSD). The graphene buffer layers allowed us to grow highly c-axisoriented GaN films at low substrate temperatures. Full-color GaN-based LEDs can be fabricated on the GaN/graphene structures and they are operated successfully. This indicates that the present technique is promising for future large-area light-emitting displays on amorphous substrates. key words: GaN, graphene, glass, pulsed sputtering deposition
影响因子：
4.6
作者：
Mohn, Stefan;Stolyarchuk, Natalia;Albrecht, Martin
通讯作者：
Albrecht, Martin