Zero-Field Time-of-Flight Measurements of Electron Diffusion in P+-GaAs
Zero-Field Time-of-Flight Measurements of Electron Diffusion in P+-GaAs
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P -GaAs 中电子扩散的零场飞行时间测量
DOI：
10.1143/jjap.30.l135
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发表时间：
1991
影响因子：
1.5
通讯作者：
Mark S. Lundstrom
中科院分区：
文献类型：
--
作者：
M. L. Lovejoy;B. Keyes;M. Klausmeier;M. Melloch;R. Ahrenkiel;Mark S. Lundstrom
利用扩展的零场飞行时间技术，在零场条件下测量了p+- gaas掺杂NA≃1.4×1018和~ 1019 cm-3的少数电子扩散率。描述了该技术的扩展，使其适用于重掺杂的p+-GaAs，并讨论了零场数据。出乎意料的是，与最近报道的高场数据相比，大多数载流子阻力效应并不明显。p+-GaAs中电子的低零场迁移率对异质结双极晶体管等高速器件具有重要意义。
Minority electron diffusivities in p+-GaAs-doped NA≃1.4×1018 and ∼1019 cm-3 have been measured in zero-field conditions with an extension of the zero-field time-of-flight technique. Extension of the technique to make it applicable to heavily doped p+-GaAs is described and zero-field data are discussed. Unexpectedly, majority carrier drag effects are not evident in a comparison of this data with recently reported high-field data. Low zero-field mobility of electrons in p+-GaAs has important implications for high-speed devices such as heterojunction bipolar transistors.