A Quantum-Corrected Monte Carlo Study on Quasi-Ballistic Transport in Nanoscale MOSFETs
A Quantum-Corrected Monte Carlo Study on Quasi-Ballistic Transport in Nanoscale MOSFETs
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DOI：
10.1109/ted.2006.885672
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发表时间：
2006-11
影响因子：
3.1
通讯作者：
H. Tsuchiya;K. Fujii;T. Mori;T. Miyoshi
中科院分区：
文献类型：
--
作者：
H. Tsuchiya;K. Fujii;T. Mori;T. Miyoshi
在本文中，作者基于量子修正的蒙特卡罗器件模拟，研究了纳米硅MOSFET中的准弹道输运，以探索最终的器件性能。结果表明，当沟道长度小于30 nm时，由于弹道输运效应，沟道源端的平均电子速度增加，然后在10 nm以下接近弹道极限。此外，作者还阐明了在沟道源端产生非对称动量分布函数的物理机制以及沟道区的后向散射的影响。作者还证明了在完全弹道传输下的电子注入速度与沟道长度无关，并且与Natori分析模型的预测很好地对应
In this paper, the authors study a quasi-ballistic transport in nanoscale Si-MOSFETs based upon a quantum-corrected Monte Carlo device simulation to explore an ultimate device performance. It was found that, when a channel length becomes shorter than 30 nm, an average electron velocity at the source-end of the channel increases due to ballistic transport effects, and then, it approaches a ballistic limit in a sub-10-nm regime. Furthermore, the authors elucidated a physical mechanism creating an asymmetric momentum distribution function at the source-end of the channel and the influences of backscattering from the channel region. The authors also demonstrated that an electron injection velocity at a perfectly ballistic transport is independent of the channel length and corresponds well to a prediction from Natori's analytical model