Direct evidence for shallow acceptor states with nonspherical symmetry in GaAs -: art. no. 026407
Direct evidence for shallow acceptor states with nonspherical symmetry in GaAs -: art. no. 026407
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DOI：
10.1103/physrevlett.94.026407
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发表时间：
2005-01-21
影响因子：
8.6
通讯作者：
Ebert, P
中科院分区：
文献类型：
--
作者：
Mahieu, G;Grandidier, B;Ebert, P
我们在低温下用截面扫描隧道显微镜（STM）和光谱研究了GaAs中Zn和Be掺杂诱导的受主态的能量和对称性。基态和第一激发态被发现具有非球对称性。特别地，第一受激受体态具有T（d）对称性。它对STM空态图像的主要贡献使我们能够解释III-V族半导体中受主杂质空态STM图像中观察到的令人困惑的三角形对比度。
We investigate the energy and symmetry of Zn and Be dopant-induced acceptor states in GaAs using cross-sectional scanning tunnelling microscopy (STM) and spectroscopy at low temperatures. The ground and first excited states are found to have a nonspherical symmetry. In particular, the first excited acceptor state has a T(d) symmetry. Its major contribution to the STM empty-state images allows us to explain the puzzling triangular shaped contrast observed in the empty-state STM images of acceptor impurities in III-V semiconductors.