Single-mode condition for silicon rib waveguides
Single-mode condition for silicon rib waveguides
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DOI：
10.1109/jlt.2002.804036
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发表时间：
2002-10
影响因子：
4.7
通讯作者：
O. Powell
中科院分区：
文献类型：
--
作者：
O. Powell
采用光束传播方法研究了大截面绝缘体上硅（SOI）波导中单模传播所需的几何条件。考虑了垂直壁和斜壁（梯形）肋结构的情况。在梯形情况下，将几种近似方法与模拟结果进行了比较。定义了两种波导单模条件下的表达式。
The geometrical conditions required for single-mode propagation in large cross-section silicon-on-insulator (SOI) waveguides were investigated using the beam propagation method (BPM). The cases of both vertical-walled and sloping-walled (trapezoidal) rib structures were considered. In the trapezoidal case some approximate methods were compared with the simulated results. Expressions for the single-mode condition for both types of waveguide were defined.