Light output improvement of 10 W operated vertical LEDs via surface roughening using a commercialized developer
Light output improvement of 10 W operated vertical LEDs via surface roughening using a commercialized developer
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DOI：
10.1007/s10854-015-2846-1
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发表时间：
2015-02
期刊：
影响因子：
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通讯作者：
T. Jeong;H. Park;K. Jung;J. Baek;J. Ha;Won-Sik Choi;Si-Hyun Park
中科院分区：
文献类型：
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作者：
T. Jeong;H. Park;K. Jung;J. Baek;J. Ha;Won-Sik Choi;Si-Hyun Park
我们报道了通过n-GaN表面粗糙化来提高10 W工作的InGaN基垂直发光二极管的光提取效率的有效性，使用商业光刻胶（PR）显影液作为蚀刻溶液，并与传统的KOH基溶液进行了比较。对于用于n-GaN表面粗糙化的常规KOH基溶液，尽管蚀刻金字塔的深度和密度最初都随着蚀刻时间而增加，但是深度最终减小并且密度也逐渐减小，导致提取效率的改善效果降低。然而，使用商业PR显影剂进行蚀刻，在蚀刻金字塔的深度及其密度的初始增加之后，深度和密度保持不变而没有劣化，证实了提取效率的改善有效性的改善以及批次间制造均匀性的改善。这可能是由于利用显影剂，GaN表面仅沿着位错被蚀刻，并且即使随着蚀刻时间的延长也不会在非缺陷区域上被蚀刻。
We report improvement of improvement effectiveness of the light extraction efficiency of 10 W operated InGaN-based vertical light-emitting diodes via n-GaN surface roughening, using acommercial photoresist(PR)developeras an etching solution, which was compared with a conventional KOH-based solution. With the conventional KOH-based solution for n-GaN surface roughening, although both the depth and density of the etch pyramid initially increased with etching time, the depth eventually decreased and the density also decreased gradually, resulting in degradation in improvement effectiveness of extraction efficiency. Using the commercial PR developer for etching, however, after an initial increase in both the depth of the etch pyramid and its density, the depth and density were maintained without degradation, confirming the improvement in improvement effectiveness of extraction efficiency as well as the improvement in run to run fabrication uniformity. This may be due that with developer the GaN surface is etched only along the dislocation and is not etched over the non-defect region even as etching time goes on.