The spectral resolution of high temperature GaAs photon counting soft X-ray photodiodes
The spectral resolution of high temperature GaAs photon counting soft X-ray photodiodes
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DOI：
10.1016/j.nima.2011.06.101
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发表时间：
2011-10-21
影响因子：
1.4
通讯作者：
Gomes, R. B.
中科院分区：
文献类型：
--
作者：
Barnett, A. M.;Lees, J. E.;Gomes, R. B.
本文报道了用于光子计数软X射线光谱的圆形梅萨（+）-i-n（+）二极管的制作和在+80 ~-30 ℃温度范围内的特性。的二极管的光谱性能，作为测量的Mn K-α的X-射线线从Fe-55放射性同位素的半高宽，报告。此外，我们比较了GaAs二极管与以前制造和表征的Al 0.8Ga 0.2As p（+）-i-n（+）二极管的类似的几何形状。(C)2011 Elsevier B. V.保留所有权利。
Circular mesa GaAs p(+)-i-n(+) diodes for photon counting soft X-ray spectroscopy have been fabricated and characterised over a temperature range of +80 to -30 degrees C. The spectroscopic performance of the diodes, as measured by the FWHM of the Mn K-alpha X-ray line from an Fe-55 radioisotope, is reported. In addition, we compare the GaAs diodes with previously fabricated and characterised Al0.8Ga0.2As p(+)-i-n(+) diodes of similar geometry. (C) 2011 Elsevier B.V. All rights reserved.