Confocal scanning photoluminescence for mapping electron and photon beam-induced microscopic changes in SiN(x)during nanopore fabrication
Confocal scanning photoluminescence for mapping electron and photon beam-induced microscopic changes in SiN(x)during nanopore fabrication
复制标题
共焦扫描光致发光用于绘制纳米孔制造过程中电子和光子束引起的 SiN(x) 微观变化
DOI:
10.1088/1361-6528/ab9bd4
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发表时间:
2020
期刊:
影响因子:
3.5
通讯作者:
Guan Weihua
中科院分区:
文献类型:
--
作者:
He Xiaodong;Tang Zifan;Liang Shengfa;Liu Ming;Guan Weihua
Focused electron and laser beams have shown the ability to form nanoscale pores in SiN x membranes. During the fabrication process, areas beyond the final nanopore location will inevitably be exposed to the electron beams or the laser beams due to the need for localization, alignment and focus. It remains unclear how these unintended exposures affect the integrity of the membrane. In this work, we demonstrate the use of confocal scanning photoluminescence (PL) for mapping the microscopic changes in SiN x nanopores when exposed to electron and laser beams. We developed and validated a model for the quantitative interpretation of the scanned PL result. The model shows that the scanning PL result is insensitive to the nanopore size. Instead, it is dominated by the product of two microscopic material factors: quantum yield profile (ie variations in electronic structure) and thickness profile (ie thinning of the membrane). We experimentally demonstrated that the electron and laser beams could alter the material electronic structures (ie quantum yield) even when no thinning of the membrane occurs. Our results suggest that minimizing the unintended e-beam or laser beam to the SiN x during the fabrication is crucial if one desires the microscopic integrity of the membrane.