Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
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DOI：
10.1116/1.4971991
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发表时间：
2017-01-01
影响因子：
2.9
通讯作者：
Schmeisser, Dieter
中科院分区：
文献类型：
--
作者：
Henkel, Karsten;Kot, Malgorzata;Schmeisser, Dieter
在这项研究中，作者比较了不同的Al 2 O3薄膜生长的原子层沉积（ALD）与相同的铝前体，但在不同的基板上。作者采用了不同的工艺参数，如热ALD和等离子体增强ALD，使用不同的衬底温度，从280摄氏度到室温。他们通过共振光电子能谱和电学测量来表征这些薄膜。他们确定ALD-Al 2 O3薄膜通常显示出块状Al 2 O3的特征。对于研究的所有薄膜，作者在电子带隙内发现了本征缺陷态，并识别了激子、极化子和电荷转移缺陷态。作者给出了一个原子模型来解释这些本征缺陷，并发现它们的相对丰度是ALD参数和所用衬底的选择的主题。他们能够将光谱分配的间隙缺陷态与我们的电学测量中确定的电子电荷联系起来。(C)2016年美国真空学会。
In this study, the authors compared different Al2O3 films grown by atomic layer deposition (ALD) with the same aluminum precursor but on different substrates. The authors employed different process parameters such as thermal-ALD and plasma-enhanced-ALD using different substrate temperatures ranging from 280 degrees C down to room temperature. They characterized these films by resonant photoelectron spectroscopy and by electrical measurements. They established that generally the ALD-Al2O3 films show characteristic features of bulk Al2O3. For all films investigated, the authors found intrinsic defect states within the electronic band gap and identified excitonic, polaronic, and charge-transfer defect states. The authors gave an atomistic model to explain these intrinsic defects and found that their relative abundance is subject of the choice of ALD parameters and of the substrate used. They were able to relate the spectroscopic assigned in-gap defect states with the electronic charges as determined in our electrical measurements. (C) 2016 American Vacuum Society.