Domain-wall pinning by steplike thickness change in magnetic thin film
Domain-wall pinning by steplike thickness change in magnetic thin film
复制标题
磁性薄膜中阶梯状厚度变化的畴壁钉扎
DOI：
10.1063/1.2162038
复制
发表时间：
2006
影响因子：
3.2
通讯作者：
T. Koyanagi
中科院分区：
文献类型：
--
作者：
M. Takezawa;K. Ejiri;J. Yamasaki;H. Asada;T. Koyanagi
制作了一种厚度呈阶梯状变化的薄膜元件，实验研究了薄膜器件形状控制对畴壁的钉扎效应。利用克尔显微镜对元件的钉扎特性进行了磁畴观察。结果表明，薄膜厚度的40%阶跃变化可以实现壁钉扎，钉扎场为2.53 Oe。钉扎场随阶梯状厚度变化率的增大而增大。
A thin-film element with a steplike thickness change has been fabricated to investigate experimentally a pinning effect of domain walls by a shape control of thin-film devices. Using a Kerr microscope, domain observation has been done to measure pinning characteristics of the element. It has been shown that 40% steplike thickness change of the film thickness can realize a wall pinning, and a pinning field of 2.53 Oe is obtained. The pinning field increases with increasing steplike thickness change ratio.