Rear Junction Bifacial Screen-Printed Double Side Passivated Contact Si Solar Cells
Rear Junction Bifacial Screen-Printed Double Side Passivated Contact Si Solar Cells
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后结双面丝网印刷双面钝化接触硅太阳能电池
DOI：
10.1109/pvsc48317.2022.9938774
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
S. Duttagupta
中科院分区：
文献类型：
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作者：
Y. Ok;V. Upadhyaya;B. Rounsaville;A. Upadhyaya;Wook;A. Rohatgi;Gabby De Luna;John Derek Arcebal;Pradeep Padhamnath;S. Duttagupta
We report on the fabrication of fully screen-printed bifacial large area (244 $\mathbf{cm}^{\boldsymbol{2}})\boldsymbol{\sim 20.6\%}$ efficient rear junction cells with full area poly-Si/SiOx passivating contacts on both sides. A full area thin n-TOPCon (~35 nm) was deposited on the textured front side in conjunction with thick p-TOPCon (~250 nm) on the planar rear side using LPCVD grown intrinsic poly-Si and ex-situ doping technology. Excellent $\mathbf{iV}_{\mathbf{o}\mathbf{c}}$ of ~730 mV was achieved on the cell precursor after SiNx capping layers on both sides, prior to metallization. However, iVoc dropped from 730 to 715 mV after a simulated high-temperature firing process $(\boldsymbol{ > 700 \ ^{\circ}} \mathbf{C})$ without metallization. This was mainly due to the degradation of textured n-TOPCon passivation quality after the firing cycle without the metal paste. After fire through screen-printed contact formation, a preliminary efficiency of -20.6% was achieved with full area double side TOPCon (DS-TOPCon) cell structure with a high Voc of -700mV and excellent contact resistance. Device modelling shows that further optimization of paste and firing can lead to much higher efficiency.
We report on the fabrication of fully screen-printed bifacial large area (244 $\mathbf{cm}^{\boldsymbol{2}})\boldsymbol{\sim 20.6\%}$ efficient rear junction cells with full area poly-Si/SiOx passivating contacts on both sides. A full area thin n-TOPCon (~35 nm) was deposited on the textured front side in conjunction with thick p-TOPCon (~250 nm) on the planar rear side using LPCVD grown intrinsic poly-Si and ex-situ doping technology. Excellent $\mathbf{iV}_{\mathbf{o}\mathbf{c}}$ of ~730 mV was achieved on the cell precursor after SiNx capping layers on both sides, prior to metallization. However, iVoc dropped from 730 to 715 mV after a simulated high-temperature firing process $(\boldsymbol{ > 700 \ ^{\circ}} \mathbf{C})$ without metallization. This was mainly due to the degradation of textured n-TOPCon passivation quality after the firing cycle without the metal paste. After fire through screen-printed contact formation, a preliminary efficiency of -20.6% was achieved with full area double side TOPCon (DS-TOPCon) cell structure with a high Voc of -700mV and excellent contact resistance. Device modelling shows that further optimization of paste and firing can lead to much higher efficiency.