3.3-kV-Class 4H-SiC MeV-Implanted UMOSFET With Reduced Gate Oxide Field
3.3-kV-Class 4H-SiC MeV-Implanted UMOSFET With Reduced Gate Oxide Field
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DOI：
10.1109/led.2016.2520464
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发表时间：
2016-03-01
影响因子：
4.9
通讯作者：
Okumura, Hajime
中科院分区：
文献类型：
--
作者：
Harada, Shinsuke;Kobayashi, Yusuke;Okumura, Hajime
SiC沟槽栅金属氧化物半导体场效应晶体管（UMOSFETs）的关键问题是栅氧化物屏蔽沟槽底部的电场。在这封信中，低导通电阻与低栅极电场，实现了在3.3千伏级的UMOSFET与独特的六边形掩埋p-基极区形成的MeV离子注入。通过自对准的沟槽底部屏蔽区进一步增强了屏蔽效果。具有和不具有沟槽底部屏蔽区域的特定导通电阻分别为8.3和9.4 m Ω cm（2）。在每种情况下的阻断电压类似于3800 V。在3300 V下，具有沟槽底部屏蔽区的栅极氧化物中的电场降低到2.5 MV/cm。
A critical issue for SiC trench gate metal-oxide-semiconductor field-effect transistors (UMOSFETs) is gate oxide shielding from the electric field at the trench bottom. In this letter, low ON-resistance with low gate electric field was achieved in a 3.3-kV-class UMOSFET with a unique hexagonal buried p-base region formed by MeV ion implantation. The shielding effect was further enhanced by a self-aligned trench bottom shielding region. The specific ON-resistance, with and without the trench bottom shielding region, was 8.3 and 9.4 m Omega cm(2), respectively. The blocking voltage in each case was similar to 3800 V. The electric field in the gate oxide with the trench bottom shielding region was reduced to 2.5 MV/cm at 3300 V.