Monte Carlo analysis of terahertz oscillations of photoexcited carriers in GaAs p-i-n structures
Monte Carlo analysis of terahertz oscillations of photoexcited carriers in GaAs p-i-n structures
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GaAs p-i-n 结构中光生载流子太赫兹振荡的蒙特卡罗分析
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
A. Reklaitis
中科院分区：
文献类型：
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作者：
A. Reklaitis
利用蒙特卡罗方法研究了GaAs p-i-n结构中飞秒光脉冲激发的电子空穴等离子体的脉冲太赫兹辐射。在模拟中考虑了由L和X谷组成的导带和由重、轻和分裂子带组成的价带。考虑了泡利不相容原理和电子与空穴间的相互散射，得到了与时间和位置相关的载流子密度和动量分布。Monte Carlo模拟结果与实验数据吻合较好。提出了光激发载流子瞬态动力学的简化流体力学模型。当激励被认为是空间均匀时，所提出的模型准确地再现蒙特卡罗结果。
Pulsed terahertz emission from the electron-hole plasma excited by a femtosecond optical pulse in GaAs p-i-n structures is studied by Monte Carlo simulations. The conduction band composed from , L, and X valleys, and the valence band composed from heavy, light, and split-off subbands, are considered in the simulations. The Pauli exclusion principle and the intercarrier scattering between electrons and holes are taken into account self-consistently with the timeand position-dependent carrier density and momentum distribution. Good agreement between Monte Carlo results and experimental data is obtained. The simplified hydrodynamic model of the transient dynamics of the photoexcited carriers is suggested. The proposed model accurately reproduces Monte Carlo results when the excitation is considered to be spatially uniform.