The effect of local polarized domains of ferroelectric P(VDF/TrFE) copolymer thin film on a carbon nanotube field-effect transistor
The effect of local polarized domains of ferroelectric P(VDF/TrFE) copolymer thin film on a carbon nanotube field-effect transistor
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DOI：
10.1088/0957-4484/19/03/035202
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发表时间：
2008-01
期刊：
影响因子：
3.5
通讯作者：
T. Nishio;Y. Miyato;K. Kobayashi;K. Ishida;K. Matsushige;H. Yamada
中科院分区：
文献类型：
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作者：
T. Nishio;Y. Miyato;K. Kobayashi;K. Ishida;K. Matsushige;H. Yamada
我们通过原子力显微镜 (AFM) 在碳纳米管场效应晶体管 (CN-FET) 通道上制备了铁电 P(VDF/TrFE) 共聚物薄膜的局部极化域。形成局部极化域后测量的漏极电流与栅极电压 (Id-Vg) 曲线显示阈值电压发生变化。我们还发现，在形成极化域后 100 小时内测量该特性期间，阈值电压的偏移量逐渐减小。阈值电压变化的机制及其降低行为可以通过极化域形成时感应的过量电荷来解释。
We produced local polarized domains of ferroelectric P(VDF/TrFE) copolymer thin films on a carbon nanotube field-effect transistor (CN-FET) channel by atomic force microscopy (AFM). The drain current versus gate voltage (Id–Vg) curves measured after forming the local polarized domains showed a shift in the threshold voltages. We also found that the amount of the shifts in the threshold voltages gradually decreased during the measurement of this characteristic over 100 h after forming the polarized domains. The mechanisms of the shifts in the threshold voltages and their decreasing behaviour were explained in terms of the excessive charges that were induced upon the formation of the polarized domains.