Picosecond dynamics of a silicon donor based terahertz detector device
Picosecond dynamics of a silicon donor based terahertz detector device
复制标题
基于硅供体的太赫兹探测器装置的皮秒动力学
DOI：
10.1063/1.4890526
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发表时间：
2014-07-14
影响因子：
4
通讯作者：
Yu, Xiaomei
中科院分区：
文献类型：
--
作者：
Bowyer, Ellis T.;Villis, B. J.;Yu, Xiaomei
我们报告的特点，一个简单的互补金属氧化物半导体兼容太赫兹探测器设备具有低响应时间（纳秒）确定使用短脉冲，高强度的自由电子激光。噪声等效功率为1 x 10（-11）W Hz（-1/2）。该探测器在窄带上具有增强的响应，最明显的是在9.5 THz，在更高的频率下具有连续响应。使用这样的设备，可以探索硅中施主的动力学，这是一个在量子信息处理方面具有巨大潜力的系统。(C)2014 AIP出版有限责任公司。
We report the characteristics of a simple complementary metal-oxide-semiconductor compatible terahertz detector device with low response time (nanoseconds) determined using a short-pulse, high intensity free-electron laser. The noise equivalent power was 1 x 10(-11) W Hz(-1/2). The detector has an enhanced response over narrow bands, most notably at 9.5 THz, with a continuum response at higher frequencies. Using such a device, the dynamics of donors in silicon can be explored, a system which has great potential for quantum information processing. (C) 2014 AIP Publishing LLC.