Thick silicon membrane technology for reliable and high performance operation of high voltage LIGBTs in Power ICs
Thick silicon membrane technology for reliable and high performance operation of high voltage LIGBTs in Power ICs
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DOI：
10.1109/ispsd.2008.4538965
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发表时间：
2008-05
期刊：
影响因子：
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通讯作者：
T. Trajkovic;F. Udrea;C. Lee;N. Udugampola;V. Pafhirana;A. Mihaila;G. Amaratunga
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文献类型：
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作者：
T. Trajkovic;F. Udrea;C. Lee;N. Udugampola;V. Pafhirana;A. Mihaila;G. Amaratunga
厚SOI膜器件的性能和可靠性的阶跃变化相比，超薄SOI膜上的器件的前一代在这里报告。首先报道的膜概念在开关损耗和击穿能力（超过700 V）之间的权衡方面提供了里程碑式的改进，但是其电流能力受到硅膜厚度的限制（对于0.25 μ m硅膜上的LIGBT，约为30 A/cm 2，实现了接近100 W/cm 2的损耗相关功率密度）。本文报道了膜功率器件，其电流密度接近垂直器件提供的最佳电流密度（电流密度大于100 A/cm，功率密度为180 W/cm 2），而不牺牲开关速度（对于1.5 μ m膜，toff < 60 ns）。HTRB的结果显示1000小时以上的操作在125摄氏度和80%的额定电压也被提出。最后，它表明，无论是静态和动态高温操作的厚膜LIGBT是优于上级的国家的最先进的集成LDMOSFET。
A step change in performance and reliability of thick SOI membrane devices compared to earlier generation of devices on ultra-thin SOI membranes is reported in here. The membrane concept first reported offered a landmark improvement in the trade-off between switching losses and breakdown capability (in excess of 700V) but its current capability was limited by the thickness of the silicon membrane (around 30 A/cm2 for LIGBTs on 0.25 mum silicon membranes, achieving a loss related power density approaching 100 W/cm2 ). This paper reports on membrane power devices with current densities which approach the best of those offered by vertical devices (current density greater than 100 A/cm with power density of 180 W/cm2 ), without sacrificing switching speed (toff < 60 ns for 1.5 mum membranes). HTRB results showing 1000 h+ operation at 125degC at 80% of the rated voltage are also presented. Finally, it is shown that both the static and dynamic high temperature operation of thick membrane LIGBTs is superior to that of state-of-the-art integrated LDMOSFETs.