Lateral etching and filling of high aspect ratio nanometer-size cavities for silicon device structures
Lateral etching and filling of high aspect ratio nanometer-size cavities for silicon device structures
复制标题
硅器件结构高深宽比纳米尺寸空腔的横向蚀刻和填充
DOI：
10.1063/1.122639
复制
发表时间：
1998
影响因子：
4
通讯作者：
K. Ng
中科院分区：
文献类型：
--
作者：
C. King;Y. Kim;K. Ng
我们研究了一种工艺技术，包括SiO2横向刻蚀耦合非晶硅（α-Si）填充作为一种可能的替代方案，以提高性能和降低成本的双极互补金属氧化物半导体技术。我们研究了横向蚀刻的氧化物层之间的硅衬底和多层堆叠的多晶硅，WSix，和Si 3 N4组成的限制的厚度为50和2.5 nm。我们发现，SiO2的横向蚀刻即使在最小厚度（2.5 nm）下也能产生极小的空腔。与SiO2厚度的蚀刻程度（固定时间）的依赖性表明，毛细管作用可能是一个重要的机制。使用标准的非晶硅沉积技术，我们重新填充所有的小腔，没有空洞形成，从透射电子显微镜照片见证。
We study a process technique involving SiO2 lateral etching coupled with amorphous Si (α-Si) refilling as a possible alternative to improve performance and lower costs for bipolar complementary metal–oxide semiconductor technologies. We investigated the lateral etching of oxide layers with thicknesses between 50 and 2.5 nm confined between a Si substrate and a multilayer stack composed of polycrystalline Si, WSix, and Si3N4. We found that the lateral etching of SiO2 proceeds even with the smallest thickness (2.5 nm) to create extremely small cavities. The etch extent (fixed time) dependence with SiO2 thickness suggests that capillary action may be an important mechanism. Using standard amorphous Si deposition techniques, we refilled all the small cavities without void formation as witnessed from transmission electron micrographs.