Preparation of CuAlO2 thin films with high transparency and low resistivity using sol–gel method
Preparation of CuAlO2 thin films with high transparency and low resistivity using sol–gel method
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DOI：
10.1007/s10971-011-2660-z
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发表时间：
2012-03
影响因子：
2.5
通讯作者：
Yang Ren;Gaoyang Zhao;Chenxi Zhang;Yuanqing Chen
中科院分区：
文献类型：
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作者：
Yang Ren;Gaoyang Zhao;Chenxi Zhang;Yuanqing Chen
以一水醋酸铜和纳米水合硝酸铝为起始材料，以异丙醇为溶剂，通过溶胶-凝胶法在石英基底上沉积 CuAlO2 薄膜。研究了退火温度对CuAlO2薄膜的薄膜结构和相演化的影响，以获得性能优越的CuAlO2薄膜。薄膜的相组成取决于退火温度。在低于 400 °C 的温度下退火的薄膜是非晶态的，而在 400 °C 以上退火的薄膜是多晶的。随着退火温度的升高，CuO和CuAl2O4相逐渐出现。当热处理温度提高到900℃时，得到均匀致密的单相CuAlO2薄膜，电阻率为15Ωcm。 310 nm 厚的 CuAlO2 薄膜在 780 nm 处的透射率为 79%，直接光学带隙为 3.43 eV。
CuAlO2thin films were deposited on quartz substrates by sol–gel process using copper acetate monohydrate and aluminum nitrate nanohydrate as starting materials and isopropyl alcohol as solvent. The influence of annealing temperature on the film structure and the phase evolution of CuAlO2films were investigated, so as to obtain CuAlO2films with superior performance. The phase compositions of the films were dependent on the annealing temperature. The films annealed at temperatures below 400 °C were amorphous while those annealed above 400 °C were polycrystalline. The phases of CuO and CuAl2O4appeared gradually with the increase of annealing temperature. When the heat treatment temperature was elevated to 900 °C, the uniform and dense films with single phase of CuAlO2were obtained, with a resistivity of 15 Ωcm. The transmittance of the 310 nm-thick CuAlO2film is 79% at 780 nm and the direct optical band gap is 3.43 eV.