Evaluation of the charge transfer efficiency of organic thin-film photovoltaic devices fabricated using a photoprecursor approach
Evaluation of the charge transfer efficiency of organic thin-film photovoltaic devices fabricated using a photoprecursor approach
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DOI：
10.1039/c4pp00477a
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发表时间：
2015-01-01
影响因子：
3.1
通讯作者：
Yamada, Hiroko
中科院分区：
文献类型：
--
作者：
Masuo, Sadahiro;Sato, Wataru;Yamada, Hiroko
近年来，一种独特的“半导体前体法”被报道为一种通过溶液工艺制备p-i-n三层有机光伏器件（OPV）的新方法。采用两种不同的前体和一种[6，6]-苯基C-71丁酸甲酯（PC 71 BM）作为给体和受体制备p-i-n结构，p-i-n光生伏打的光伏效率高于相应的p-n器件和i器件，而p-i-n光生伏打的光伏效率取决于前体。在这项工作中，电荷转移效率的i-设备组成的cross-recursors和PC 71 BM的使用高灵敏度的荧光显微光谱结合时间相关的单光子计数技术，以阐明光伏效率依赖于cross-recursors和p-i-n架构的影响进行了研究。空间分辨的荧光图像和荧光寿命测量清楚地表明，与PC 71 BM的兼容性的前体的电荷转移和光伏效率的影响。虽然i-器件的电荷转移效率相当高，但i-器件的光伏效率远低于p-i-n器件的光伏效率。这些结果意味着通过制造p-i-n结构可以提高载流子产生和载流子输运效率。
Recently, a unique 'photoprecursor approach' was reported as a new option to fabricate a p-i-n triple-layer organic photovoltaic device (OPV) through solution processes. By fabricating the p-i-n architecture using two kinds of photoprecursors and a [6,6]-phenyl C-71 butyric acid methyl ester (PC71BM) as the donor and the acceptor, the p-i-n OPVs afforded a higher photovoltaic efficiency than the corresponding p-n devices and i-devices, while the photovoltaic efficiency of p-i-n OPVs depended on the photoprecursors. In this work, the charge transfer efficiency of the i-devices composed of the photoprecursors and PC71BM was investigated using high-sensitivity fluorescence microspectroscopy combined with a time-correlated single photon counting technique to elucidate the photovoltaic efficiency depending on the photoprecursors and the effects of the p-i-n architecture. The spatially resolved fluorescence images and fluorescence lifetime measurements clearly indicated that the compatibility of the photoprecursors with PC71BM influences the charge transfer and the photovoltaic efficiencies. Although the charge transfer efficiency of the i-device was quite high, the photovoltaic efficiency of the i-device was much lower than that of the p-i-n device. These results imply that the carrier generation and carrier transportation efficiencies can be increased by fabricating the p-i-n architecture.