Design and Optimization of Bidirectional Tunable MEMS All-Silicon Evanescent-Mode Cavity Filter
Design and Optimization of Bidirectional Tunable MEMS All-Silicon Evanescent-Mode Cavity Filter
复制标题
双向可调谐MEMS全硅倏逝模腔体滤波器的设计与优化
DOI：
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发表时间：
2020
影响因子：
4.3
通讯作者：
D. Peroulis
中科院分区：
文献类型：
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作者：
ZhengAn Yang;Runqi Zhang;D. Peroulis
本文提出了一种双向静电MEMS调谐器，可以实现基于空腔的集成倏逝模可调谐滤波器的有源电压补偿。与传统的单向静电隔膜调谐可调谐谐振器不同，双向设计可以补偿剩余的位移误差。这种校正调谐可以成功地抵消大位移MEMS隔膜中常见的长期粘弹性松弛。因此，在不增加制造复杂性的情况下，可以显著提高稳定性和可靠性。详细讨论了RF-MEMS协同设计和具体的优化设计流程。制作了一个概念验证的两极滤波器，其双向调谐范围为18.9-39.6 GHz。正向（主）驱动在120v下将滤波器从21.3 GHz调谐到39.6 GHz，而反向（校正）驱动在2v下将其从21.3 GHz调谐到18.9 GHz。测量到的滤波器插入损耗从3.14到0.78 dB不等。提取的卸载质量因子为265-510，可与该类型最先进的单向过滤器相媲美。
This article presents a bidirectional electrostatic MEMS tuner that enables active voltage compensation of integrated evanescent-mode cavity-based tunable filters. Unlike conventional tunable resonators tuned by unidirectional electrostatic diaphragms, the bidirectional design can compensate for residual displacement errors. This corrective tuning can successfully counterbalance long-term viscoelastic relaxation commonly found in large-displacement MEMS diaphragms. Consequently, it can significantly improve stability and reliability without introducing fabrication complexity. A detailed RF-MEMS codesign and a specific optimization design flow are also discussed. A proof-of-concept, two-pole filter is fabricated, which demonstrates a measured bidirectional tuning range of 18.9–39.6 GHz. The forward (main) actuation tunes the filter from 21.3 to 39.6 GHz with 120 V, whereas the reverse (corrective) actuation tunes it from 21.3 down to 18.9 GHz with 2 V. The measured filter insertion loss varies from 3.14 to 0.78 dB. The extracted unloaded quality factor is 265–510, which is comparable with the state-of-the-art unidirectional filters of this type.