EFFECTS OF SUBSTRATE TEMPERATURE ON THE LASER DAMAGE THRESHOLD OF SPUTTERED SIO2 FILMS
EFFECTS OF SUBSTRATE TEMPERATURE ON THE LASER DAMAGE THRESHOLD OF SPUTTERED SIO2 FILMS
复制标题
基片温度对溅射SiO2薄膜激光损伤阈值的影响
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
L. Vasanelli
中科院分区：
文献类型：
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作者：
M. Alvisi;G. D. Nunzio;M. Ferrara;M. Perrone;A. Rizzo;S. Scaglione;L. Vasanelli
SiO2 薄膜是通过离子束溅射技术在无辅助或有氩离子辅助的情况下沉积的，并且研究了沉积过程中基底温度对波长 308 nm (XeCl) 激光的薄膜损伤阈值的影响。光声探测光束偏转技术已用于确定损伤阈值，并且表明该技术提供了有关导致激光损伤的机制的有价值的信息。已经发现，通过Ar离子束溅射技术沉积的样品与没有离子辅助沉积的SiO2薄膜相比，在较低的衬底温度下具有更高的损伤阈值。
SiO2 films have been deposited by ion-beam sputtering techniques either without assistance or with Ar-ion assistance and the role of the substrate temperature during the deposition process on the film damage threshold by laser light at the wavelength of 308 nm (XeCl) has been investigated. The photoacoustic probe beam deflection technique has been used to determine damage thresholds and it is shown that this technique provides valuable information on the mechanisms leading to laser damage. It has been found that the samples deposited by the Ar-ion beam sputtering technique are characterized by higher damage thresholds at lower temperatures of the substrate than the SiO2 films deposited without ion assistance.