Helium-charged Titanium Films Deposited by Pulsed Laser Deposition in an Electron-Cyclotron-Resonance helium Plasma Environment
Helium-charged Titanium Films Deposited by Pulsed Laser Deposition in an Electron-Cyclotron-Resonance helium Plasma Environment
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DOI：
10.1088/0256-307x/20/3/320
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发表时间：
2003-03
影响因子：
3.5
通讯作者：
Jin Qin-hua;Hu Pei-Gang;L. Hao;Wu Jia-Da;Shi Li-qun;Zhou Zhu-Ying
中科院分区：
文献类型：
--
作者：
Jin Qin-hua;Hu Pei-Gang;L. Hao;Wu Jia-Da;Shi Li-qun;Zhou Zhu-Ying
在电子回旋共振氦等离子体环境中用脉冲激光沉积法制备了掺氦钛薄膜。氦在薄膜中分布均匀，质子背散射谱测得的He/Ti原子比约为20%。这种高浓度的氦导致表面起泡，这通过扫描电子显微镜观察到。激光重复频率对薄膜特性影响不大。氦离子注入机理的研究也是通过改变衬底偏压来实现的，这是一个在薄膜生长过程中进行氦离子注入的过程。选择合适的衬底偏置电压，可以避免一般注入情况下离子注入产生的损伤。
Titanium thin films incorporated with helium are produced by pulsed laser deposition in an electron cyclotron resonance helium plasma environment. Helium is distributed evenly in the film and a relatively high He/Ti atomic ratio (~20%) is obtained from the proton backscattering spectroscopy. This high concentration of helium leads to a surface blistering which is observed by scanning electron microscopy. Laser repetition rate has little influence on film characters. Substrate bias voltage is also changed for the helium incorporating mechanism study, and this is a helium ion implantation process during the film growth. Choosing suitable substrate bias voltage, one can avoid the damage produced by ion implantation, which is always present in general implantation case.