Coulomb engineering of the bandgap and excitons in two-dimensional materials.
Coulomb engineering of the bandgap and excitons in two-dimensional materials.
复制标题
DOI：
10.1038/ncomms15251
复制
发表时间：
2017-05-04
影响因子：
16.6
通讯作者：
Chernikov A
中科院分区：
文献类型：
--
作者：
Raja A;Chaves A;Yu J;Arefe G;Hill HM;Rigosi AF;Berkelbach TC;Nagler P;Schüller C;Korn T;Nuckolls C;Hone J;Brus LE;Heinz TF;Reichman DR;Chernikov A
控制电子带隙大小的能力是固态技术的一个组成部分。原子薄的二维晶体提供了一种新的方法来调整电子态的能量，基于这些材料中库仑相互作用的不寻常强度及其环境敏感性。在这里，我们表明，通过工程周围的介电环境，可以调整电子带隙和激子的结合能在单层的WS2和WSe 2的数百毫电子伏。我们利用这种行为，提出了一个平面内的电介质异质结构与空间依赖的带隙，作为第一步，创造不同的横向结与纳米级的分辨率。半导体中的电子带隙调谐实现了固态器件中的关键功能。在这里，作者提出了一种策略，通过操纵周围的介电环境，而不是通过修改材料本身来控制原子级薄WS2和WSe2半导体的带隙。
The ability to control the size of the electronic bandgap is an integral part of solid-state technology. Atomically thin two-dimensional crystals offer a new approach for tuning the energies of the electronic states based on the unusual strength of the Coulomb interaction in these materials and its environmental sensitivity. Here, we show that by engineering the surrounding dielectric environment, one can tune the electronic bandgap and the exciton binding energy in monolayers of WS2 and WSe2 by hundreds of meV. We exploit this behaviour to present an in-plane dielectric heterostructure with a spatially dependent bandgap, as an initial step towards the creation of diverse lateral junctions with nanoscale resolution. Electronic bandgap tuning in semiconductors enables key functionalities in solid-state devices. Here, the authors present a strategy to control the bandgap of atomically thin WS2 and WSe2 semiconductors via manipulation of the surrounding dielectric environment rather than by modifications of the materials themselves.