A new type of defect on {1120} planes in ß-Si3N4 produced by neutron irradiation
A new type of defect on {1120} planes in ß-Si3N4 produced by neutron irradiation
复制标题
中子辐照在ß-Si3N4中产生的{1120}面上的一种新型缺陷
DOI：
10.1080/09500830010024657
复制
发表时间：
2001
影响因子：
1.2
通讯作者：
T. Yano
中科院分区：
文献类型：
--
作者：
M. Akiyoshi;T. Yano
对在实验快堆中经过强中子辐照的烧结β-Si 3 N4样品进行了高分辨电子显微镜研究。观察到了一种位于{1120}面的新型面缺陷。该缺陷可描述为Burgers矢量约为1/18（1/6）的间隙位错环，对应于插入{1120}面中的SiN 4四面体的额外层。基于图像模拟，提出了所观察到的缺陷的结构模型。
A high-resolution electron microscopy study has been carried out on a sintered β-Si 3 N 4 specimen which had been heavily neutron irradiated in an experimental fast reactor. A new type of planar defect lying on {1120} planes has been observed. The defect can be described as an interstitial dislocation loop with Burgers vector of approximately 1/18 (1/6 ), corresponding to an extra layer of SiN 4 tetrahedra inserted into the {1120} planes. Based on image simulations, a structural model for the observed defect is proposed.