Electrical and optical properties of GaN films implanted with Mn and Co
Electrical and optical properties of GaN films implanted with Mn and Co
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DOI：
10.1063/1.1499977
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发表时间：
2002-08
影响因子：
3.2
通讯作者：
A. Polyakov;N. Smirnov;A. Govorkov;N. Pashkova;J. Kim;F. Ren;M. Overberg;G. Thaler;C. Abernathy;S. Pearton;R. Wilson
中科院分区：
文献类型：
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作者：
A. Polyakov;N. Smirnov;A. Govorkov;N. Pashkova;J. Kim;F. Ren;M. Overberg;G. Thaler;C. Abernathy;S. Pearton;R. Wilson
在高剂量Mn （3×1016和4×1016 cm−2）和Co （4×1016 cm−2）注入的n-GaN样品上，测量了电注入和光注入时的透射光谱、微阴极发光光谱、电容电压和电容频率曲线、电阻率的温度依赖性和深能级光谱。光透射结果表明，Mn在Ev+1.8 Ev附近形成深受体，Co在Ev+ 0.1 Ev附近形成深受体。此外，Mn和Co形成具有天然缺陷的配合物，这些配合物是深度电子陷阱，能级接近Ec - 0.5 eV。这种配合物最有可能产生能量接近2.9 eV的强蓝色发光带。在注入区附近形成了约1 μm深的缺陷区，这很可能是在700℃退火过程中由注入区产生的点缺陷向外扩散造成的。该区域的特点是在Ec−0.25 eV和Ec−0.7 eV有高密度的电子阱和空穴…
Optical transmission spectra, microcathodoluminescence spectra, capacitance–voltage and capacitance–frequency curves, temperature dependence of resistivity and deep level spectra with both electrical and optical injection were measured on n-GaN samples implanted with high doses of Mn (3×1016 and 4×1016 cm−2) and Co (4×1016 cm−2). From optical transmission it was found that Mn forms a deep acceptor near Ev+1.8 eV while the Co acceptor is about 0.1 eV deeper. In addition, Mn and Co form complexes with native defects and these complexes are deep electron traps with a level near Ec−0.5 eV. Such complexes are most likely responsible for a strong blue luminescence band with energy near 2.9 eV. Adjacent to the implanted region a defect region about 1 μm deep is formed, most likely by out-diffusion of point defects from the implanted zone during the 700 °C annealing used to partially remove the radiation damage. This region is characterized by a high density of electron traps at Ec−0.25 eV and Ec−0.7 eV and hole ...