Grain Orientation Mapping of Polycrystalline Organic Semiconductor Films by Transverse Shear Microscopy
Grain Orientation Mapping of Polycrystalline Organic Semiconductor Films by Transverse Shear Microscopy
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DOI：
10.1002/adma.200801834
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发表时间：
2008-11-03
影响因子：
29.4
通讯作者：
Frisbie, C. Daniel
中科院分区：
文献类型：
--
作者：
Kalihari, Vivek;Tadmor, E. B.;Frisbie, C. Daniel
扫描探针技术，称为横向剪切显微镜，可以在多晶有机半导体的超薄层中产生晶粒尺寸、形状和晶体取向的惊人图像。这项新技术的主要特点是能够生成晶粒取向图，从而促进晶粒排列和晶界角度分布的定量分析。
A scanning probe technique, termed transverse shear microscopy, produces striking images of grain size, shape, and crystallographic orientation in ultrathin layers of polycrystalline organic semiconductors. The key feature of this novel technique is its ability to generate Grain Orientation Maps that facilitate quantitative analysis of grain alignment and the angular distribution of GBs.