Electron Transport in Polymer‐Derived Amorphous Silicon Oxycarbonitride Ceramics
Electron Transport in Polymer‐Derived Amorphous Silicon Oxycarbonitride Ceramics
复制标题
DOI：
10.1111/j.1551-2916.2009.03044.x
复制
发表时间：
2009-07
影响因子：
3.9
通讯作者：
Yansong Wang;T. Jiang;Ligong Zhang;L. An
中科院分区：
文献类型：
--
作者：
Yansong Wang;T. Jiang;Ligong Zhang;L. An
通过电导率随温度的变化研究了聚合物基非晶碳氮氧化硅陶瓷的电子输运行为。实验结果进行了分析，使用理论模型。结果表明，该材料表现出三种导电机制：在扩展状态下的导电，在带尾导电，在局域状态下的导电。特别是，它被发现，在低温制度，材料的传导遵循带尾跳跃机制，而不是先前假设的可变范围跳跃机制。结果还表明，随着热解温度的升高，能隙如EC-EF和EC-EA减小。
The electron transport behavior of polymer-derived amorphous silicon oxycarbonitride ceramics is studied by measuring their temperature-dependent electrical conductivities. The experimental results are analyzed using theoretical models. The results reveal that the materials exhibit three conduction mechanisms: conduction in extended states, conduction in band tails, and conduction in localized states. Particularly, it is found that in a low-temperature regime, the conduction of the materials follows a band tail hopping mechanism, rather than the previously assumed variable range hopping mechanism. The results also reveal that energy gaps such as EC−EF and EC−EA decrease with increasing pyrolysis temperature.